Thermal reaction of Pt film with Š110‹ GaN epilayer
نویسندگان
چکیده
Backscattering spectrometry, x-ray diffractometry, and scanning electron microscopy have been used to study the reaction of a thin Pt film with an epilayer of ^110& GaN on ^110& sapphire upon annealing at 450, 550, 650, 750, and 800 °C for 30 min. A Ga concentration of 2 at. % is detected by MeV He backscattering spectrometry in the Pt layer at 550 °C. By x-ray diffraction, structural changes are observed already at 450 °C. At 650 °C, textured Ga2Pt appears as reaction product. The surface morphology exhibits instabilities by the formation of blisters at 650 °C and voids at 800 °C. © 1999 American Vacuum Society. @S0734-2101~99!10705-X#
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